HVV0912-150 Datasheet, PDF (5/8 Pages) HVVi Semiconductors, Inc. – L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications

H V V0912-150 H igh Voltage, H igh Ruggedness
L-Band Avionics Pulsed Power Transistor
960-1215 MHz, 10µs Pulse, 10% Duty Cycle
For Ground and Air DME, TCAS and I F F Applications
Typical device performance under Class AB mode of operation at 1215MHz and RF pulse conditions of 10µs
pulse width and 10% duty cycle with V_DD = 50V and I_DQ = 100mA. The high voltage silicon vertical technology
shows less than 2dB of power degradation over an extreme case teperature rise of 125°C.
Measured at P1dB Compression Point
TEMP Gain (dB) Power (W) Power (dBm)
-40C
22.5
188
52.7
0C
20.3
212
53.3
25C
19.8
193
52.9
85C
17.7
148
51.7
!
HVV0912-150 Performance over Temperature