HVV0912-150 Datasheet, PDF (2/8 Pages) HVVi Semiconductors, Inc. – L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications

H V V0912-150 H igh Voltage, H igh Ruggedness
L-Band Avionics Pulsed Power Transistor
960-1215 MHz, 10µs Pulse, 10% Duty Cycle
! _{For Ground and Air DME, TCAS and I F F Applications}
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! _{ABSOLUTE MAXIMUM RATING (IEC 134)}
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THERMAL/RUGGEDNESS PERFORMANCE
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The HVV0912-150 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at
rated output power and nominal operating voltage across the frequency band of operation.
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ELECTRICAL CHARACTERISTICS
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Notes:
1) Rated at TCASE = 25°C
2) All parameters measured under pulsed conditions at 150W output power measured at the 10% point of the pulse with pulse width = 10µsec,
duty cycle = 10% and VDD = 50V, IDQ = 100mA in a broadband matched test fixture.
3) Amount of gate voltage required to attain nominal quiescent current.
4) Guaranteed by design.