MRF374 Datasheet, PDF (2/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

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CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
C_ISS
C_OSS
C_RSS
V_DS = 28 V
V_GS = 0 V
f = 1.0 MHz
MINIMUM
TYPICAL
80
45
3.5
MAXIMUM
UNITS
pF
P_G
V_DD = 28 V
I_DQ = 400 mA
P_OUT = 100 W
12.5
13.5
dB
η_D
f1 = 857 MHz, f2 = 863 MHz
30
36
%
IMD
-28
-31
dB
VSWR
5:1
---
P_G
V_DD = 28 V
I_DQ = 500 mA
P_OUT = 100 W
12
dB
η_D
f1 = 857 MHz, f2 = 863 MHz
36
%
IMD
-34
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
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Specifications are subject to change without notice.
REV. A
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