MRF374 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRF374
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF374 is Designed for
broadband commercial and industrial
applications in 470 to 860 MHz band.
FEATURES:
• P_G = 13.5 dB typ. at 100 W/875 MHz
• η_D = 36 % Typical
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_D
7.0 A
V_DSS
65 V
V_GS
±20 V
P_DISS
270 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
0.65 °C/W
PACKAGE STYLE .230 BAL FLG.
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
V_DSS
I_DS = 1.0 µA
I_DSS
V_DS = 28 V
I_GSS
V_GS = 20 V
V_GS(th)
V_DS = 10 V
I_D = 200 µA
V_GS(Q)
V_DS = 28 V
I_D = 100 mA
V_DS(ON)
V_DS = 10 V
I_D = 3.0 A
G_FS
V_DS = 10 V
I_D = 3.0 A
MINIMUM TYPICAL MAXIMUM
65
1.0
1.0
2.0
3.5
4.0
3.0
4.2
5.0
0.56
0.8
2.2
2.8
UNITS
V
µA
µA
V
V
V
S
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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