ASX415_17 Datasheet, PDF (17/18 Pages) Advanced Semiconductor Business Inc. – 250 ~ 4000 MHz MMIC Amplifier

APPLICATION CIRCUIT
LTE
2300 ~ 2700 MHz
Gain Flatness < 0.5 dB
+5 V
Schematic
Vs = 5V
RF IN
C1=68 pF
3.5 mm
C3=1.8
pF
ASX415
D1=5.6V
Zener Diode
C6=1 F
C5=100pF
L1=15 nH
(Coil Inductor)
C2=68 pF
RF OUT
3.5 mm
C4=1.2 pF
ASX415
250 ~ 4000 MHz MMIC Amplifier
Frequency (MHz)
2300 2500 2700
Magnitude S21 (dB)
12.9 13.1 12.8
Magnitude S11 (dB)
-5
-8
-18
Magnitude S22 (dB)
-18 -18 -18
Output P1dB (dBm)
27.5
Output IP3¹⁾ (dBm)
36
Noise Figure (dB)
5.1
Device Voltage (V)
+5
Current (mA)
155
1) OIP3 is measured with two tones at an output power of +6
dBm/tone separated by 1 MHz.
Board Layout (FR4, 40x40 mm², 0.8T)
S-parameters & K-factor
20
0
-5
15
-10
10
-15
-20
5
-25
0
2000
0
2200
2400
2600
Frequency (MHz)
2800
3000
-30
2000
5
2200
2400
2600
Frequency (MHz)
2800
3000
-5
4
-10
3
-15
2
-20
1
-25
-30
2000
2200
2400
2600
Frequency (MHz)
2800
3000
0
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
17/18
ASB Inc.  [e-mail]  Tel: [phone]
February 2017