ASX415_17 Datasheet, PDF (1/18 Pages) Advanced Semiconductor Business Inc. – 250 ~ 4000 MHz MMIC Amplifier

ASX415
250 ~ 4000 MHz MMIC Amplifier
Features
Description
 14 dB Gain at 2000 MHz
 27 dBm P1dB at 2000 MHz
 42 dBm OIP3 at 2000 MHz
 ACLR @ WCDMA 4FA: -51 dBc
The ASX415, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both
receiver and transmitter of telecommunication sys-
tems up to 4 GHz. The amplifier is available in a
@ Pout = +13 dBm, +/- 5 MHz offset ^{SOT89 package and passes through the stringent}
 MTTF > 100 Years
DC, RF, and reliability tests.
 Single Supply
4
ASX415
Package Style: SOT89
Typical Performance
(Supply Voltage = Device Voltage, TA = +25 C, Z0 = 50 )
Parameters
Units
Typical
Frequency
MHz
900
2000
2000
2000
2600
Gain
dB
20.0
14.5
14.3
14.0
11.5
S11
dB
-14
-7
-7
-7
-7
S22
Output IP3¹⁾
dB
-13
-11
-11
-11
-10
dBm
42.5
46.0
42.0
40.0
37.0
Noise Figure
dB
4.2
5.6
4.6
4.1
4.2
Output P1dB
dBm
29.0
29.0
27.0
26.5
29.0
Current
mA
155
185
155
123
155
Device Voltage
V
+5.00
+5.30
+5.00
+4.75
+5.00
1) OIP3 is measured with two tones at an output power of +8 dBm/tone @ +5.30 V, +6 dBm/tone @ +5.00 V, +4 dBm/tone @ +4.75 V
separated by 1 MHz.
Application Circuit
 IF (433 ~ 444 MHz)
 CDMA
 Satellite Phone
 WCDMA
 WiMAX
 LTE (2300 ~ 2700 MHz)
Product Specifications
Parameters
Testing Frequency
Gain
S11
S22
Output IP3
Noise Figure
Output P1dB
Current
Device Voltage
Units
Min
Typ
Max
MHz
2000
dB
13.5
14.3
dB
-9
dB
-11
dBm
40
42
dB
4.6
dBm
26.5
27.0
mA
140
155
170
V
+5
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Device Voltage
Operating Junction Temperature
Input RF Power (Continuous)*
Thermal Resistance
Rating
-40 to 85 C
-40 to 150 C
+6 V
+150 C
+22 dBm
24 C/W
* Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
1/18
ASB Inc.  [e-mail]  Tel: [phone]
Pin Configuration
Pin No. Function
1
RF IN
2
GND
3
RF OUT / Bias
February 2017