ASW316 Datasheet, PDF (10/15 Pages) Advanced Semiconductor Business Inc. – MMIC Amplifier

APPLICATION CIRCUIT
LTE
2700 MHz
+5 V
Schematic
Vs=5 V
ASW316
5 ~ 3000 MHz MMIC Amplifier
Frequency (MHz)
2700
Magnitude S21 (dB)
15.5
Magnitude S11 (dB)
-20
Magnitude S22 (dB)
-10
Output P1dB (dBm)
20
Output IP3¹⁾ (dBm)
38
Noise Figure (dB)
3.2
Device Voltage (V)
+5
Current (mA)
110
1) OIP3 is measured with two tones at an output power of +4 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm², 0.8T)
RF IN
C3=1.2 pF
C1=10 pF
2 mm
ASW316
C5=1 F
C4=68 pF
L1=15 nH
C2=1.5 pF
RF OUT
L2=3.3 nH
S-parameters & K-factor
20
15
10
5
0
2200
0
2400
2600
2800
Frequency (MHz)
3000
3200
0
-5
-10
-15
-20
-25
-30
2200
5
2400
2600
2800
Frequency (MHz)
3000
3200
4
-5
3
-10
2
-15
1
10/15
-20
2200
2400
2600
2800
Frequency (MHz)
3000
3200
0
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc.  [e-mail]  Tel: [phone]
February 2017