ASW316 Datasheet, PDF (1/15 Pages) Advanced Semiconductor Business Inc. – MMIC Amplifier

ASW316
5 ~ 3000 MHz MMIC Amplifier
Features
 17 dB Gain at 900 MHz
 21 dBm P1dB at 900 MHz
 42.5 dBm OIP3 at 900 MHz
 1.9 dBm NF at 900 MHz
 MTTF > 100 Years
Description
The ASW316, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both re-
ceiver and transmitter of telecommunication systems
up to 3 GHz. The amplifier is available in a SOT89
package and passes through the stringent DC, RF,
and reliability tests.
Typical Performance
(Supply Voltage = +5 V, TA = +25 C, Z0 = 50 )
Parameters
Units
Typical
Frequency
MHz
5
900
Gain
dB
14.8
17.0
S11
dB
-18
-18
S22
dB
-10
-12
Output IP3
dBm
40.0¹⁾
42.5²⁾
Noise Figure
dB
2.9
1.9
Output P1dB
dBm
20.5
21.0
Current
mA
110
110
Device Voltage
V
+5
+5
1) OIP3 is measured with two tones at an output power of +10 dBm/tone separated by 1 MHz.
2) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz.
3) OIP3 is measured with two tones at an output power of +6 dBm/tone separated by 1 MHz.
4) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1 MHz.
1950
16.0
-20
-10
39.0³⁾
2.6
22.5
110
+5
2700
15.5
-20
-10
38.0⁴⁾
3.2
20.0
110
+5
Product Specifications
Parameters
Testing Frequency
Gain
S11
S22
Output IP3
Noise Figure
Output P1dB
Current
Device Voltage
Units
MHz
dB
dB
dB
dBm
dB
dBm
mA
V
Min
Typ.
Max
900
17
-18
-12
42.5
1.9
21
110
+5
ASW 313
ASW316
Package Style: SOT89
Application Circuit
 LTE (698 ~ 787 MHz)
 CMMB
 900 MHz
 LTE (1745 ~ 1860 MHz)
 1950 MHz
 2400 MHz
 2700 MHz
 500 ~ 3000 MHz
 IF (5 ~ 1000 MHz)
 IF (50 ~ 1000 MHz)
 IF (30 ~ 512 MHz)
Pin Configuration
Absolute Maximum Ratings
Parameters
Rating
Operating Case Temperature
-40 to 85 C
Storage Temperature
-40 to 150 C
Device Voltage
+6 V
Operating Junction Temperature
Input RF Power
(CW, 50  matched as in 1950 MHz application circuit)*
Thermal Resistance
+150 C
+23 dBm
60 C/W
* Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
The max. input power, in principle, depends upon the application frequency and the matching circuit.
1/15
ASB Inc.  [e-mail]  Tel: [phone]
Pin No.
1
2
3
Function
RF IN
GND
RF OUT & Bias
February 2017