ASW212 Datasheet, PDF (10/11 Pages) Advanced Semiconductor Business Inc. – MMIC Amplifier

ASW212
5 ~ 8000 MHz MMIC Amplifier
APPLICATION CIRCUIT
ONU
70 ~ 2700 MHz
+5 V
Frequency (MHz)
70
900 1800 2700
Magnitude S21 (dB) 17.5 14.0 12.5 11.5
Magnitude S11 (dB) -18
-13
-14
-10
Magnitude S22 (dB) -11
-11
-12
-14
Output P1dB (dBm) 18
18
17.5 18
Output IP3¹⁾ (dBm)
36
35
34
33
Output IP2²⁾ (dBm)
52
Noise Figure (dB)
4.7
5.1
5.5
5.6
Device Voltage (V)
+4.8 +4.8 +4.8 +4.8
Current (mA)
73
73
73
73
1) OIP3 is measured with two tones at an output power of +3 dBm/tone separated by 1
MHz.
2) OIP2 is measured with two tones (100MHz, 800MHz) at an output power of +0
dBm/tone, 700MHz.
Schematic
RF IN
C1=1000 pF
Vcc=5 V
R1=2.7 
ASW212
D1=5.6V
Zener Diode
C4=1 F
C3=100pF
L1=680 nH
C2=1000 pF
RF OUT
Board Layout (FR4, 40x40 mm², 0.8T)
S-parameters & K-factor
20
0
-5
15
-10
10
-15
5
-20
0
0
500
1000 1500 2000 2500 3000 3500
Frequency (MHz)
0
-25
0
5
500
1000 1500 2000 2500 3000 3500
Frequency (MHz)
4
-5
3
-10
2
-15
1
10/11
-20
0
500
1000 1500 2000 2500 3000 3500
Frequency (MHz)
0
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc.  [e-mail]  Tel: [phone]
April 2017