ASW212 Datasheet, PDF (1/11 Pages) Advanced Semiconductor Business Inc. – MMIC Amplifier

ASW212
5 ~ 8000 MHz MMIC Amplifier
Features
 14 dB Gain at 900 MHz
 18 dBm P1dB at 900 MHz
 35 dBm Output IP3 at 900 MHz
 5.0 dB NF at 900 MHz
 MTTF > 100 Years
 Single Supply
Description
The ASW212, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both
receiver and transmitter of telecommunication sys-
tems up to 8 GHz. The amplifier is available in a
SOT89 package and passes through the stringent
DC, RF, and reliability tests.
ASW212
Package Style: SOT89
Typical Performance
(Supply Voltage = +5 V, TA = +25 C, Zo = 50 )
Parameters
Units
Typical
Frequency
MHz
900
2000
Gain
dB
14.0
12.5
S11
dB
-11
-11
S22
Output IP3¹⁾
dB
dBm
-16
-14
35.0
34.0
Noise Figure
dB
5.0
5.5
Output P1dB
dBm
18
18
Current
mA
73
73
Device Voltage
V
+4.8
+4.8
1) OIP3 is measured with two tones at an output power of +3 dBm/tone separated by 1 MHz.
3500
11.0
-9
-15
28.0
5.9
17
73
+4.8
5800
11.0
-18
-15
26.5
5.6
16
73
+4.8
Application Circuit
 IF
 500 ~ 3500 MHz
 5000 ~ 6000 MHz
 8000 MHz
 70 ~ 2700 MHz
Product Specifications
Parameters
Units
Testing Frequency
Gain
S11
S22
Output IP3
Noise Figure
Output P1dB
Current
Device Voltage
MHz
dB
dB
dB
dBm
dB
dBm
mA
V
Min
Typ
Max
900
13
14
-11
-16
33
35
5.0
5.5
17
18
68
73
90
+4.8
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Device Voltage
Operating Junction Temperature
Input RF Power (CW, 50  matched)
Thermal Resistance
Rating
-40 to 85 C
-40 to 150 C
+6 V
+150 C
+25 dBm
158 C/W
Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
Pin Configuration
Pin No.
1
2
3
Function
RF IN
GND
RF OUT / Bias
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ASB Inc.  [e-mail]  Tel: [phone]
April 2017