MT110CB18T1 Datasheet, PDF (4/4 Pages) Jiangsu APT Semiconductor Co.,Ltd – Thyristor/Diode Modules

MT110CB18T1
100
1/2·MT110CB18T1
V
10
20V;20Ω
V_GT
1
V_GD125℃
V_G
I_GD125℃
0.1
-40℃
T_{vj 25℃}
125℃
I_GT
0.001 IG
0.01
0.1
1
Fig6. Gate trigger Characteristics
∧
PG(tp)
10
Package Outline Information
CASE: T1
A 100
Dimensions in mm
Document Number: S-M0049
Rev.1.0, May.31, 2013
www.apt-semi.com
4