MT110CB18T1 Datasheet, PDF (1/4 Pages) Jiangsu APT Semiconductor Co.,Ltd – Thyristor/Diode Modules

MT110CB18T1
Thyristor/Diode Modules
VRRM / VDRM
IFAV / ITAV
800 to 1800V
110Amp
Applications
y Power Converters
y Lighting Control
y DC Motor Control and Drives
y Heat and temperature control
Circuit
Features
y International standard package
y High Surge Capability
y Glass passivated chip
y Simple Mounting
y Heat transfer through aluminum oxide
DBCceramic isolated metal baseplate
y UL recognized applied for file no. E360040
Module Type
TYPE
MT110CB08T1
MT110CB12T1
MT110CB16T1
MT110CB18T1
VRRM/VDRM
800V
1200V
1600V
1800V
VRSM
900V
1300V
1700V
1900V
◆Diode
Maximum Ratings
Symbol
Item
ID
Output Current(D.C.)
IFSM Surge forward current
i²t
Circuit Fusing Consideration
Visol Isolation Breakdown Voltage(R.M.S)
Tvj Operating Junction Temperature
Tstg Storage Temperature
Mt
Mounting Torque
Ms
Weight Module（Approximately）
Thermal Characteristics
Symbol
Item
Rth(j-c) Thermal Impedance, max.
Rth(c-s) Thermal Impedance, max.
Conditions
Tc=85℃
t=10mS Tvj =45℃
a.c.50HZ;r.m.s.;1min
To terminals(M5)
To heatsink(M6)
Conditions
Junction to Case
Case to Heatsink
Values
110
2250
25000
3000
-40 to +125
-40 to +125
3±15%
5±15%
100
Units
A
A
A²s
V
℃
℃
Nm
Nm
g
Values
0.14
0.10
Units
℃/W
℃/W
Electrical Characteristics
Symbol
Item
VFM
IRRM
Forward Voltage Drop, max.
Repetitive Peak Reverse Current,
max.
Conditions
T=25℃ IF =300A
Tvj =25℃ VRD=VRRM
Tvj =125℃ VRD=VRRM
Values
Min. Typ. Max.
1.65
≤0.5
≤6
Units
V
mA
mA
Document Number: S-M0049
Rev.1.0, May.31, 2013
www.apt-semi.com
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