AO6604 Datasheet, PDF (7/9 Pages) List of Unclassifed Manufacturers – Complementary Enhancement Mode Field Effect Transistor

AO6604
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
-4V
-4.5V
20
-3V
-3.5V
20
V_DS=-5V
15
15
-2.5V
10
125°C
10
-2V
5
25°C
5
V_GS=-1.5V
0
0
1
2
3
4
5
-V_DS (Volts)
Fig 1: On-Region Characteristics (Note E)
0
0
0.5
1
1.5
2
2.5
3
-V_GS(Volts)
Figure 2: Transfer Characteristics (Note E)
150
130
110
V_GS=-1.8V
90
V_GS=-2.5V
70
V_GS=-4.5V
50
0
2
4
6
8
10
-I_D (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.6
V_GS=-2.5V
1.4
I_D=-2A
17
1.2
VI_DG=S-=25-.54A.5V
2
1
V_GS=-1.8V
10
I_D=-1A
0.8
0
25 50 75 100 125 150 175
Temperature (°C) ₀
Figure 4: On-Resistan(cNeotvesE. J) unctio₁n₈Temperature
180
I_D=-2.5A
160
140
120
100
125°C
80
60
25°C
40
0
2
4
6
8
-V_GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+01
40
1.0E+00
1.0E-01 125°C
1.0E-02
25°C
1.0E-03
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-V_SD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 4: Sep 2010
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