AO6604 Datasheet, PDF (1/9 Pages) List of Unclassifed Manufacturers – Complementary Enhancement Mode Field Effect Transistor

AO6604
20V Complementary MOSFET
General Description
Product Summary
The AO6604 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R_DS(ON). This device is ideal for load switch
and battery protection applications.
N-Channel
V_DS= 20V
I_D= 3.4A (V_GS=4.5V)
R_DS(ON)
< 65mΩ (V_GS=4.5V)
< 75mΩ (V_GS=2.5V)
< 100mΩ (V_GS=1.8V)
P-Channel
-20V
-2.5A (V_GS=-4.5V)
R_DS(ON)
< 75mΩ (V_GS=-4.5V)
< 95mΩ (V_GS=-2.5V)
< 115mΩ (V_GS=-1.8V)
TSOP6
Top View
Bottom View
Top View
D1
D2
G1 ₁
6 ^D1
S2 2
5 S1
G2 3
4 D2
G1
G2
S1
S2
Pin1
n-channel
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol Max n-channel Max p-channel
Drain-Source Voltage
V_DS
20
-20
Gate-Source Voltage
V_GS
±8
±8
Continuous Drain
T_A=25°C
Current
T_A=70°C
Pulsed Drain Current ^C
3.4
-2.5
I_D
2.5
-2
I_DM
13
-13
T_A=25°C
Power Dissipation ^B T_A=70°C
1.1
1.1
P_D
0.7
0.7
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
78
106
Maximum Junction-to-Lead
Steady-State
R_θJL
64
Max
Units
110
°C/W
150
°C/W
80
°C/W
Rev 4: Sep 2010
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