AON6973A Datasheet, PDF (6/10 Pages) Alpha & Omega Semiconductors – 30V Dual Asymmetric N-Channel AlphaMOS

AON6973A
Q2 Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BV_DSS Drain-Source Breakdown Voltage
I_D=10mA, V_GS=0V
30
I_DSS
Zero Gate Voltage Drain Current
V_DS=30V, V_GS=0V
T_J=55°C
I_GSS
Gate-Body leakage current
V_DS=0V, V_GS=±20V
V_GS(th) Gate Threshold Voltage
V_DS=V_GS I_D=250µA
1.4
V_GS=10V, I_D=20A
R_DS(ON) Static Drain-Source On-Resistance
T_J=125°C
V_GS=4.5V, I_D=20A
g_FS
Forward Transconductance
V_DS=5V, I_D=20A
V_SD
Diode Forward Voltage
I_S=1A,V_GS=0V
I_S
Maximum Body-Diode Continuous Current ^G
V
0.5
mA
100
±100 nA
1.8 2.2
V
3.1 3.9
mΩ
4.2 5.3
4.8 6.4 mΩ
85
S
0.48 0.6
V
36
A
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=15V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
1975
pF
913
pF
92
pF
0.7 1.5
2.3
Ω
SWITCHING PARAMETERS
Q_g(10V) Total Gate Charge
Q_g(4.5V) Total Gate Charge
Q_gs
Gate Source Charge
V_GS=10V, V_DS=15V, I_D=20A
Q_gd
Gate Drain Charge
t_D(on)
Turn-On DelayTime
t_r
Turn-On Rise Time
V_GS=10V, V_DS=15V, R_L=0.75Ω,
t_D(off)
Turn-Off DelayTime
R_GEN=3Ω
t_f
Turn-Off Fall Time
t_rr
Body Diode Reverse Recovery Time ^IF^{=20A, dI/dt=500A/µs}
Q_rr
Body Diode Reverse Recovery Charge ^IF^{=20A, dI/dt=500A/µs}
29
40 nC
13.6 19 nC
5.8
nC
5.3
nC
7.9
ns
4.0
ns
27.3
ns
6.5
ns
19
ns
36.7
nC
A. The value of R_θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with T_A =25°C. The
Power dissipation P_DSM is based on R_θJA ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation P_D is based on T_J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial T_J =25°C.
D. The R_θJA is the sum of the thermal impedence from junction to case R_θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T_J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Nov. 2012
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