AON6973A Datasheet, PDF (1/10 Pages) Alpha & Omega Semiconductors – 30V Dual Asymmetric N-Channel AlphaMOS

AON6973A
30V Dual Asymmetric N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Integrated Schottky Diode (SRFET) on Low-Side
• Very Low RDS(on) at 4.5V_GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS=4.5V)
100% UIS Tested
100% Rg Tested
Q1
30V
28A
<5.2mΩ
<9.5mΩ
Q2
30V
32A
<3.9mΩ
<6.4mΩ
Top View
DFN5X6B
Bottom View
Top View
Bottom View
PIN1
PIN1
Q2: SRFET^TM
Soft Recovery MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain ^TC^=25°C
Current ^G
T_C=100°C
Pulsed Drain Current ^C
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche Energy L=0.05mH ^C
V_DS Spike
100ns
T_C=25°C
Power Dissipation ^B T_C=100°C
T_A=25°C
Power Dissipation ^A T_A=70°C
Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_DSM
I_AS
E_AS
V_SPIKE
P_D
P_DSM
T_J, T_STG
30
±20
±20
28
32
22
25
112
144
22
30
17
24
32
50
26
63
36
36
31
33
12
13
3.6
4.3
2.3
2.7
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ Q1
29
56
3.3
Typ Q2
24
50
3
Max Q1
35
67
4
Max Q2
29
60
3.8
Units
V
V
A
A
A
mJ
V
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0 : Nov. 2012
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