AOL1702 Datasheet, PDF (6/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOL1702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1
1.0E-02
0.8
VDS=24V
1.0E-03
0.6
VDS=12V
1.0E-04
0.4
1.0E-05
0.2
20A
10A
5A
I_S=1A
1.0E-06
0
50
100
150
200
Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
60
di/dt=1000A/us
50
18
125ºC
15
40
25ºC
12
30
Qrr
20
10
Irm
9
125ºC
6
25ºC
3
0
0
0
5
10
15
20
25
30
Is (A)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
0
0
50
100
150
200
Temperature (°C)
Figure 18: Diode Forward voltage vs. Junction
Temperature
15
2.5
di/dt=1000A/us
12
125ºC
2
9
trr
25ºC
1.5
6
3
S
1
25ºC
0.5
125ºC
0
0
0
5
10
15
20
25
30
Is (A)
Figure 20: Diode Reverse Recovery Time and
Soft Coefficient vs. Conduction Current
50
15
45
Is=20A
40
125ºC
12
35
25ºC
30
9
25
20
Qrr
15
125º
6
25ºC
10
3
5
Irm
0
0
0
200 400 600 800 1000 1200
di/dt (A)
Figure 21: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
27
2.5
24
125ºC
Is=20A
21
2
18
25ºC
1.5
15
12
25ºC
9
trr ¹
6
125ºC
3
S
0.5
0
0
0
200 400 600 800 1000 1200
di/dt (A)
Figure 22: Diode Reverse Recovery Time and
Soft Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.
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