AOL1702 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOL1702
N-Channel Enhancement Mode Field Effect Transistor
SRFET ^TM
General Description
The AOL1702 uses advanced trench technology with
a monolithically integrated Schottky diode to provide
excellent R_DS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications. Standard
Product AOL1702L is Pb-free (meets ROHS & Sony
259 specifications). AOL1702L is a Green Product
ordering option. AOL1702 and AOL1702L are
electrically identical.
Features
V_DS (V) = 30V
I_D =70A (V_GS = 10V)
R_DS(ON) < 5.8mΩ (V_GS = 10V)
R_DS(ON) < 7.2mΩ (V_GS = 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8^TM Top View
Fits SOIC8
footprint !
D
SRFET ^TM
D
Soft Recovery MOSFET:
Bottom tab
Integrated Schottky Diode
connected to
G
S
drain
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C ^G
Current ^B
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain T_A=25°C
Current^A
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.3mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±12
70
52
100
21
17
30
135
58
29
5
3.2
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
20
50
25
60
Maximum Junction-to-Case ^D
Steady-State
R_θJC
2.1
2.6
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com