AOB438 Datasheet, PDF (5/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOB438
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
50
40
T_A=25°C
30
20
10
0.00001
0.0001
0.001
Time in avalanche, t_A (s)
Figure 12: Single Pulse Avalanche capability
60
50
50
40
30
20
10
0
0
50
40
1.4
494
593
692
830
25 50 75 100 125 150 175
T_CASE (°C)
Figure 13: Power D₁e₉-r₃ating (Note B)
18
T_A=25°C
40
30
30
20
20
10
10
0
0
25 50 75 100 125 150 175
T_CASE (°C)
Figure 14: Current De-rating (Note B)
0
0.01
0.1
59
1 ₁₄₂ 10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
0.001
0.00001
Single Pulse
D=T_on/T
T_J,PK=T_A+P_DM.Z_θJA.R_θJA
R_θJA=50°C/W
P_D
T_on
T
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1000
Alpha & Omega Semiconductor, Ltd.