AOB438 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOB438
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOB438 uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
product AOB438 is Pb-free (meets ROHS & Sony
259 specifications). AOB438L is a Green Product
ordering option. AOB438 and AOB438L are
electrically identical.
TO-263
D2-PAK
Features
1.4
V_DS (V) = 25V
I_D = 50A (VGS = 10V)
R_DS(ON) < 6.7 mΩ (V_GS = 10V)
R_DS(ON) < 10 mΩ (VGS = 4.5V)
193
18
D
Top View
Drain Connected to
Tab
G
S
GD S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_C=25°C
Current ^G
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.3mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
25
±20
50
50
150
30
135
50
25
3
2.1
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
15
41
20
50
Maximum Junction-to-Case ^B
Steady-State
R_θJC
2.1
3
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.