AO4916A Datasheet, PDF (5/8 Pages) Alpha & Omega Semiconductors – Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AO4916A
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
6
4
2
0
0
V_DS=15V
I_D=8.5A
5
10
15
20
Q_g (nC)
Figure 7: Gate-Charge Characteristics
1600
1400
1200
f=1MHz
C_iss
V_GS=0V
1000
800
600
C_oss FET+SCHOTTKY
400
200
0
C_rss
0
5
10
15
20
25
30
V_DS (Volts)
Figure 8: Capacitance Characteristics
100.0
T_J(Max)=150°C, T_A=25°C
R_DS(ON)
10.0 limited
1ms
10ms
10µs
100µs
0.1s
1.0
1s
10s
DC
0.1
0.1
1
10
100
V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
40
T_J(Max)=150°C
T_A=25°C
30
20
10
0
0.001 0.01 0.1
1
10
100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=T_on/T
In descending order
T_J,PK=T_A+P_DM.Z_θJA.R_θJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R_θJA=62.5°C/W
1
0.1
P_D
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T_on
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
1000
Alpha & Omega Semiconductor, Ltd.