AO4916A Datasheet, PDF (1/8 Pages) Alpha & Omega Semiconductors – Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AO4916A
Dual N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
General Description
The AO4916A uses advanced trench technology to
provide excellent R DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency further
Standard product AO4916A is Pb-free (meets ROHS &
Sony 259 specifications). AO4916AL is a Green Product
ordering option. AO4916A and AO4916AL are
electrically identical.
Features
Q1
Q2
V_DS (V) = 30V
V_DS(V) = 30V
I_D = 8.5A (VGS = 10V) I_D = 8.5A (VGS = 10V)
R_DS(ON) < 17mΩ
<17mΩ (V_GS = 10V)
R_DS(ON) < 27mΩ
<27mΩ (V_GS = 4.5V)
SCHOTTKY
V_DS (V) = 30V, I_F = 3A, V_F<0.5V@1A
D2
D2
G1
S1/A
1 8 G2
2 7 D1/S2/K
3 6 D1/S2/K
4 5 D1/S2/K
SOIC8
Q1
G1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
D1
K
A
G2
S1
D2 _Q2
S2
Max Q1
30
±20
8.5
6.6
30
2
1.28
-55 to 150
Max Q2
30
±20
8.5
6.6
30
2
1.28
-55 to 150
Units
V
V
A
W
°C
Parameter
Reverse Voltage
Continuous Forward T_A=25°C
Current ^A
T_A=70°C
Pulsed Diode Forward Current ^B
Power Dissipation ^A
T_A=25°C
T_A=70°C
Junction and Storage Temperature Range
Symbol
V_DS
I_F
I_FM
P_D
T_J, T_STG
Maximum Schottky
30
3
2.2
20
2
1.28
-55 to 150
Units
V
A
W
°C
Alpha & Omega Semiconductor, Ltd.