AOT8N80 Datasheet, PDF (4/6 Pages) Alpha & Omega Semiconductors – 800V, 7.4A N-Channel MOSFET

AOT8N80/AOTF8N80
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
V_DS=640V
I_D=8A
12
9
6
3
10000
1000
100
10
C_iss
C_oss
C_rss
0
0
8
16
24
32
40
Q_g (nC)
Figure 7: Gate-Charge Characteristics
100
1
0.1
1
10
100
V_DS (Volts)
Figure 8: Capacitance Characteristics
100
10
R_DS(ON)
limited
10µs
100µs
10
R_DS(ON)
limited
10µs
100µs
1
1ms
DC
10ms
0.1
0.01
T_J(Max)=150°C
T_C=25°C
1
10
100
1000
V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT8N80 (Note F)
1
1ms
DC
0.1
T_J(Max)=150°C
T_C=25°C
10ms
0.1s
1s
0.01
1
10
100
1000
V_DS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF8N80 (Note F)
10
8
6
4
2
0
0
25
50
75 100 125 150
T_CASE (°C)
Figure 11: Current De-rating (Note B)
Rev0: Jun 2012
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