AOT8N80 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 800V, 7.4A N-Channel MOSFET

AOT8N80/AOTF8N80
800V, 7.4A N-Channel MOSFET
General Description
Product Summary
The AOT8N80 & AOTF8N80 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.By providing
low R_DS(on), C_iss and C_rss along with guaranteed avalanche
capability these parts can be adopted quickly into new and
existing offline power supply designs.
For Halogen Free add "L" suffix to part number:
AOT8N80L & AOTF8N80L
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% R_g Tested
TO-220
Top View
TO-220F
900V@150℃
7.4A
< 1.63Ω
D
AOT8N80
S
D
G
AOTF8N80
S
GD
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain
T_C=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single pulsed avalanche energy ^G
Peak diode recovery dv/dt
V_GS
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
T_J, T_STG
T_L
Parameter
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Symbol
R_θJA
R_θCS
Maximum Junction-to-Case
R_θJC
* Drain current limited by maximum junction temperature.
G
AOT8N80
800
±30
7.4
4.6
26
3.8
217
433
5
245
2.0
-55 to 150
AOTF8N80
7.4*
4.6*
50
0.4
300
AOT8N80
65
0.5
0.51
AOTF8N80
65
--
2.5
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev0: Jun 2012
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