AON5800 Datasheet, PDF (4/4 Pages) Alpha & Omega Semiconductors – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AON5800
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V_DS=10V
4
I_D=8A
2400
C_iss
1800
3
1200
2
0.5
1
C_oss
1
600
C_rss
0
0
3
6
9
12
15
Q_g (nC)
Figure 7: Gate-Charge Characteristics
0
0
5
10
15
V_DS (Volts)
Figure 8: Capacitance Characteristics
100.0
200
10.0
R_DS(ON)
limited
10μs
160
100μs
120
T_J(Max)=150°C
T_A=25°C
1ms
1.0
10ms
DC
100ms
1s
T_J(Max)=150°C, T_A=25°C
10s
0.1
0.1
1
10
100
V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
80
40
0
0.0001 0.001 0.01 0.1
1
10 100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note E)
10
D=T_on/T
T_J,PK=T_C+P_DM.Z_θJC.R_θJA
R_θJA=75°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.00001
P_D
Single Pulse
T_on
T
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
1000
Alpha & Omega Semiconductor, Ltd.