AON5800 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AON5800
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AON5800 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V_GS(MAX) rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its common-
drain configuration. Standard Product AON5800 is Pb-
free (meets ROHS & Sony 259 specifications).
AON5800L is a Green Product ordering option.
AON5800 and AON5800L are electrically identical.
Features
V_DS (V) = 20V
I_D = 8 A (V_GS = 10V)
R_DS(ON) < 16 mΩ (V_GS = 10V)
R_DS(ON) < 20 mΩ (V_GS = 4.5V)
R_DS(ON) < 21 mΩ (V_GS = 4.0V)
R_DS(ON) < 22 mΩ (V_GS = 3.1V)
R_DS(ON) < 27 mΩ (V_GS = 2.5V)
R_DS(ON) < 45 mΩ (V_GS = 1.8V)
ESD Rating: 2000V HBM
S2
G2
D
Top View
S1
G1
Bottom View
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C
Current R_θJA=75°C/W T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
Power Dissipation ^{A T}A^=25°C
R_θJA=75°C/W
T_A=70°C
Junction and Storage Temperature Range
P_DSM
T_J, T_STG
Maximum
20
±12
8
6.3
45
1.6
1.0
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Case ^B
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
30
61
Steady-State
R_θJC
4.5
Max
40
75
6
Units
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.