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AO4404B Datasheet, PDF (4/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor
AO4404B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
VDS=15V
4
ID=8.5A
3
2
1
0
0
2
4
6
8
10
12
Qg (nC)
Figure 7: Gate-Charge Characteristics
1400
1200
1000
Ciss
800
600
400
Crss
200
Coss
0
0
5
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
RDS(ON)
limited
100µs
1ms
10ms
0.1s
TJ(Max)=150°C
TA=25°C
1.0
1s
10s
DC
0.1
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
50
TJ(Max)=150°C
40
TA=25°C
30
20
10
0
0.0001 0.001 0.01 0.1
1
10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=45°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
THIS PROD0U.1CT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKETP. ADPPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TTOonIMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHSOinUgTle NPOulTsIeCE.
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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