AO4404B Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO4404B
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4404B uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be used
to bypass the source inductance. Standard Product
AO4404B is Pb-free (meets ROHS & Sony 259
specifications).
Features
V_DS (V) = 30V
I_D = 8.5A (V_GS = 10V)
R_DS(ON) < 24mΩ (V_GS = 10V)
R_DS(ON) < 30mΩ (V_GS = 4.5V)
R_DS(ON) < 48mΩ (V_GS = 2.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
S
D
S
D
S
D
G
D
SOIC-8
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^AF
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Avalanche Current ^B
I_AR
Repetitive avalanche energy 0.3mH ^B
E_AR
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±12
8.5
7.1
60
2.8
1.8
15
34
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^AF
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
37
70
45
100
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
26
36
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W