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AO3434 Datasheet, PDF (4/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor
AO3434
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
VDS=15V
8
ID=4.2A
6
500
400
Ciss
300
4
2
0
0
1
2
3
4
5
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
200
Coss
100
0 Crss
0
5
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
RDS(ON)
limited
10µs
100µ
1.0
1m
10ms
0.1
TJ(Max)=150°C
DC
TA=25°C
0.1s
10s
0.0
0.01
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
30
25
TJ(Max)=150°C
TA=25°C
20
15
10
5
0
0.001 0.01 0.1
1
10
100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONEN0.T1S IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOSPDDOES NOT ASSUME ANY LIABILITY ARISIG
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Single Pulse
0.01
Ton
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com