AO3434 Datasheet, PDF (2/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO3434
Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
STATIC PARAMETERS
BV_DSS
I_DSS
I_GSS
V_GS(th)
I_D(ON)
R_DS(ON)
g_FS
V_SD
I_S
Drain-Source Breakdown Voltage
I_D=250µA, V_GS=0V
30
Zero Gate Voltage Drain Current
V_DS=30V, V_GS=0V
T_J=55°C
Gate-Body leakage current
V_DS=0V, V_GS= ±16V
Gate Threshold Voltage
V_DS=V_GS I_D=250µA
1
On state drain current
V_GS=10V, V_DS=5V
30
V_GS=10V, I_D=4.2A
Static Drain-Source On-Resistance
T_J=125°C
V_GS=4.5V, I_D=2A
Forward Transconductance
V_DS=5V, I_D=4.2A
Diode Forward Voltage
I_S=1A,V_GS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=15V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
SWITCHING PARAMETERS
Q_g(10V)
Q_g(4.5V)
Q_gs
Q_gd
t_D(on)
t_r
t_D(off)
t_f
t_rr
Q_rr
Total Gate Charge
Total Gate Charge
Gate Source Charge
V_GS=10V, V_DS=15V, I_D=4.2A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
V_GS=10V, V_DS=15V, R_L=3.6Ω,
R_GEN=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time ^IF^{=4.2A, dI/dt=100A/µs}
Body Diode Reverse Recovery Charge ^IF^{=4.2A, dI/dt=100A/µs}
Typ
1.32
43
58
59
8.5
0.77
269
65
41
1
5.7
3
1.37
0.65
2.6
5.5
15.2
3.7
15.5
7.1
Max Units
V
1
µA
5
10 uA
1.8
V
A
52
mΩ
74
75 ^mΩ
S
1
V
1.8
A
340 pF
pF
pF
1.5
Ω
7.2 nC
nC
nC
nC
3.8 ns
8
ns
23
ns
5.5 ns
21
ns
nC
A: The value of R _θJA is measured with the device mounted on 1in ² FR-4 board with 2oz. Copper, in a still air environment with T _A=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R _θJA is the sum of the thermal impedence from junction to lead R _θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in ² FR-4 board with 2oz. Copper, in a still air environment with T _A=25°C. The SOA
curve provides a single pulse rating.
F.The current rating is based on the t≤10s thermal resistance rating.
Rev0: Mar. 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com