AO3424 Datasheet, PDF (4/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO3424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V_DS=15V
4
I_D=2A
3
2
1
0
0
1
2
3
Q_g (nC)
Figure 7: Gate-Charge Characteristics
10.0
R_DS(ON)
limited
10µs
100µs
1s
1.0
10s
1ms
10ms
DC
T_J(Max)=150°C
T_A=25°C
0.1s
0.1
0.1
1
10
100
V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
400
350
300
250
200
150
100
50
0
0
20
15
10
C_iss
C_oss
C_rss
5
10
15
20
25
30
V_DS (Volts)
Figure 8: Capacitance Characteristics
270
T_J(Max)=150°C
T_A=25₁°_.C₇
3.6
5
0
13
0.001 0.01
0.1
1
10
Pulse Width (s)
100 1000
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=T_on/T
In descending order
T_J,PK=T_A+P_DM.Z_θJA.R_θJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R_θJA=90°C/W
1
P_D
0.1
Single Pulse
T_on
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
10
100
Figure 11: Normalized Maximum Transient Thermal Impedance
1000
Alpha & Omega Semiconductor, Ltd.