AO3424 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO3424
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3424 uses advanced trench technology to
provide excellent R_DS(ON), very low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO3424 is Pb-free
(meets ROHS & Sony 259 specifications). AO3424L
is a Green Product ordering option. AO3424 and
AO3424L are electrically identical.
Features
V_DS (V) = 30V
I_D = 2 A
(V _GS = 10V)
R_DS(ON) < 80mΩ (V_GS = 10V)
R_DS(ON) < 95mΩ (V_GS = 4.5V)
R_DS(ON) < 157mΩ (V_GS = 2.5V)
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C^F
Current ^A
T_A=70°C^F
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±12
2
2
8
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
70
100
90
125
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
63
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.