AO3416 Datasheet, PDF (4/5 Pages) List of Unclassifed Manufacturers – N-Channel Enhancement Mode Field Effect Transistor

AO3416
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V_DS=10V
I_D=6.5A
4
3
2
1
0
0
2
4
6
8
10
12
Q_g (nC)
Figure 7: Gate-Charge Characteristics
1800
1600
1400
C_iss
1200
1000
800
600
400
C_oss
200
0 ^Crss
0
5
10
15
20
V_DS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
R_DS(ON)
limited
0.1
T_J(Max)=150°C
T_A=25°C
10µs
100µs
1ms
10ms
100ms
10s
DC
0.0
0.01
0.1
1
10
100
V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10000
1000
T_J(Max)=150°C
T_A=25°C
100
10
1
0.00001 0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
D=T_on/T
T_J,PK=T_A+P_DM.Z_θJA.R_θJA
1 _{RθJA=125°C/W}
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
Single Pulse
P_D
T_on
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
1000
Rev 5: July 2010
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