AO3416 Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – N-Channel Enhancement Mode Field Effect Transistor

AO3416
20V N-Channel MOSFET
General Description
Product Summary
The AO3416 uses advanced trench technology to provide
excellent R_DS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as
a load switch or in PWM applications. It is ESD
protected.
V_DS
I_D (at V_GS=4.5V)
R_DS(ON) (at V_GS=4.5V)
R_DS(ON) (at V_GS = 2.5V)
R_DS(ON) (at V_GS = 1.8V)
ESD protected
20V
6.5A
< 22mΩ
< 26mΩ
< 34mΩ
SOT23
Top View
Bottom View
D
D
D
S
G
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
G
S
Maximum
20
±8
6.5
5.2
30
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
70
100
Maximum Junction-to-Lead
Steady-State
R_θJL
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 5: July 2010
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