AO3160 Datasheet, PDF (4/5 Pages) Alpha & Omega Semiconductors – 600V,0.04A N-Channel MOSFET

AO3160
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V_DS=400V
I_D=0.01A
6
4
2
100.00
C_iss
10.00
C_oss
1.00
C_rss
0.10
0
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Q_g (nC)
Figure 7: Gate-Charge Characteristics
0.1
1
10
100
V_DS (Volts)
Figure 8: Capacitance Characteristics
1
0.1
0.01
R_DS(ON)
limited
DC
0.001
0.0001
T_J(Max)=150°C
T_A=25°C
1
10
100
V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100µs
1ms
10ms
0.1s
1s
10s
1000
120
100
T_J(Max)=150°C
80
T_A=25°C
60
40
20
0
0.0001 0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=T_on/T
T_J,PK=T_A+P_DM.Z_θJA.R_θJA
1 ^{RθJA=125°C/W}
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
Single Pulse
P_D
T_on
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Rev1: April 2012
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