AO3160 Datasheet, PDF (3/5 Pages) Alpha & Omega Semiconductors – 600V,0.04A N-Channel MOSFET

AO3160
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
10V
5V
4.5V
4V
V_GS=3.5
0.025
0.02
V_DS=40V
0.015
0.01
0.005
25°C
0
0
2
4
6
8
10
V_DS (Volts)
Fig 1: On-Region Characteristics
0
0
1
2
3
4
5
V_GS(Volts)
Figure 2: Transfer Characteristics
800
2.5
600
400
V_GS=4.5V
200
V_GS=10V
0
0
0.01
0.02
0.03
0.04
I_D (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.2
I_D=30A
1.1
2
V_GS=4.5V
I_D=0.016A
1.5
V_GS=10V
I_D=0.016A
1
0.5
25
50
75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+00
1.0E-0410
125°C
1
125°
1.0E-02
0.9
25°
1.0E-03
25°C
0.8
1.0E-04
-100 -50
0
50 100 150 200
T_J (^oC)
Figure 5: Break Down vs. Junction Temperature
0.2
0.4
0.6
0.8
1.0
V_SD (Volts)
Figure 6: Body-Diode Characteristics
Rev1: April 2012
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