AO8846 Datasheet, PDF (3/4 Pages) Alpha & Omega Semiconductors – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AO8846
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
25
4.5V
20
3.1V
20
2.5V
15
1.8V
V_GS=1.5V
15
V_DS= 5V
10
10
125°C
5
0
0
0.5
1
1.5
2
2.5
3
V_DS (Volts)
Figure 1: On-Region Characteristics
5
25°C
-40°C
0
0
0.4
0.8
1.2
1.6
2
V_GS(Volts)
Figure 2: Transfer Characteristics
23
V_GS= 1.8V
21
19
V_GS= 2.5V
V_GS= 3.1V
17
V_GS= 4.0V
V_GS= 4.5V
15
0
2
4
I6_F=-6.5A, 8dI/dt=10100A/µs
I_D (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.5
V_GS= 2.5V
I_D= 6.5A
1.3
V_GS= 1.8V
I_D= 6A
V_GS= 4.5V
I_D= 7A
1.1
0.9
0.7
-50 -25 0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
55
1E+01
I_D= 7.0A
1E+00
45
1E-01
125°C
35
1E-02
1E-03
THIS PR2O5DUCT HAS BEEN DESIGNED AN1D25Q°UCALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR25U°CSES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AU1TEH-0O4RIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN
25°C
OUT OF1S5UCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
1E-05
-40°C
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
-40°C
5
1E-06
1
2
3
4
5
6
7
8
0.0
0.2
0.4
0.6
0.8
1.0
V_GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
V_SD (Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com