AO8846 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AO8846
Common-Drain Dual N-Channel Enhancement Mode
Field Effect Transistor
General Description
The AO8846 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge. It is ESD
protected. This device is suitable for use as a uni-
directional or bi-directional load switch, facilitated by its
common-drain configuration. Standard Product AO8846
is Pb-free (meets ROHS & Sony 259 specifications).
Features
V_DS = 20V
I_D = 7.0A
(V_GS = 4.5V)
R_DS(ON) < 20mΩ (V_GS = 4.5V)
R_DS(ON) < 20mΩ (V_GS = 4.0V)
R_DS(ON) < 21mΩ (V_GS = 3.1V)
R_DS(ON) < 22mΩ (V_GS = 2.5V)
R_DS(ON) < 27mΩ (V_GS = 1.8V)
TSSOP-8
Top View
D1/D2 1
S1 2
S1 3
G1 4
8 D1/D2
7 S2
6 S2
5 G2
D1
1.8KΩ
G1
1.8KΩ
G2
S1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
Drain-Source Voltage
V_DS
20
Gate-Source Voltage
V_GS
±8
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
Pulsed Drain Current ^B
7
5.7
I_D
5.7
4.8
I_DM
25
Power Dissipation ^{A TA=25°C}
T_A=70°C
1.5
1.0
P_D
1.0
0.7
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A Steady State
R_θJA
64
89
83
120
Maximum Junction-to-Lead ^C
Steady State RθJL
53
70
D2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com