AOD2N100 Datasheet, PDF (2/6 Pages) Alpha & Omega Semiconductors – 1000V,2A N-Channel MOSFET

AOD2N100
Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BV_DSS Drain-Source Breakdown Voltage
I_D=250µA, V_GS=0V, T_J=25°C
I_D=250µA, V_GS=0V, T_J=150°C
BV_DSS
/∆TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
I_DSS
Zero Gate Voltage Drain Current
V_DS=1000V, V_GS=0V
V_DS=800V, T_J=125°C
I_GSS
Gate-Body leakage current
V_DS=0V, V_GS=±30V
V_GS(th) Gate Threshold Voltage
V_DS=5V, I_D=250µA
R_DS(ON) Static Drain-Source On-Resistance
V_GS=10V, I_D=1A
g_FS
Forward Transconductance
V_DS=40V, I_D=1A
V_SD
Diode Forward Voltage
I_S=1A,V_GS=0V
I_S
Maximum Body-Diode Continuous Current
I_SM
Maximum Body-Diode Pulsed Current
1000
3.3
1100
1
4
7.5
2
0.76
V
V/ ^oC
1
µA
10
±100 nΑ
4.5
V
9
Ω
S
1
V
2
A
7
A
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=25V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
380 477 580 pF
20
31
45
pF
1.5 2.7 4.0 pF
1.5 3.1 4.8
Ω
SWITCHING PARAMETERS
Q_g
Total Gate Charge
Q_gs
Gate Source Charge
V_GS=10V, V_DS=800V, I_D=2A
Q_gd
Gate Drain Charge
t_D(on)
Turn-On DelayTime
t_r
t_D(off)
Turn-On Rise Time
Turn-Off DelayTime
V_GS=10V, V_DS=500V, I_D=2A,
R_G=25Ω
t_f
Turn-Off Fall Time
t_rr
Body Diode Reverse Recovery Time ^IF^{=2A,dI/dt=100A/µs,V}DS^=100V
Q_rr
Body Diode Reverse Recovery Charge ^IF^{=2A,dI/dt=100A/µs,V}DS^=100V
6
9.7 15 nC
2.6
nC
3.5
nC
20
ns
19
ns
29
ns
21
ns
220 287 350 _ns
1.5 2.2 3.0
µC
A. The value of R _θJA is measured with the device in a still air environment with T _A =25°C.
B. The power dissipation P_D is based on T_J(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C.
D. The R _θJA is the sum of the thermal impedance from junction to case R _θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T_J(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in² FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C.
H. L=60mH, I_AS=1.9A, V_DD=150V, R_G=10Ω, Starting T_J=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0 March 2013
www.aosmd.com
Page 2 of 6