AOD2N100 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 1000V,2A N-Channel MOSFET

AOD2N100
1000V,2A N-Channel MOSFET
General Description
Product Summary
The AOD2N100 has been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular AC-
DC applications.
By providing low R_DS(on), C_iss and C_rss along with
guaranteed avalanche capability this part can be adopted
quickly into new and existing offline power supply
designs.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested!
100% R_g Tested!
1100V@150℃
2A
< 9Ω
Top View
TO252
DPAK
Bottom View
D
D
S
G
G
S
G
AOD2N100
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain
Current^B
T_C=25°C
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single pulsed avalanche energy ^H
Peak diode recovery dv/dt
V_GS
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_J, T_STG
T_L
Maximum
1000
±30
2
1.2
7
1.9
54
108
5
83
0.7
-50 to 150
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A,G
Maximum Case-to-sink ^A
Maximum Junction-to-Case^D,F
Symbol
R_θJA
R_θCS
R_θJC
Typical
45
-
1.2
Maximum
55
0.5
1.5
D
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev.1.0 March 2013
www.aosmd.com
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