AO4606 Datasheet, PDF (2/9 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AO4606
N-Channel Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
STATIC PARAMETERS
BV_DSS Drain-Source Breakdown Voltage
I_DSS
Zero Gate Voltage Drain Current
I_GSS
V_GS(th)
I_D(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
R_DS(ON) Static Drain-Source On-Resistance
I_D=250µA, V_GS=0V
30
V_DS=24V, V_GS=0V
T_J=55°C
V_DS=0V, V_GS=±20V
V_DS=V_GS I_D=250µA
1
V_GS=4.5V, V_DS=5V
20
V_GS=10V, I_D=6.9A
T_J=125°C
V_GS=4.5V, I_D=5.0A
g_FS
Forward Transconductance
V_DS=5V, I_D=6.9A
10
V_SD
Diode Forward Voltage
I_S=1A
I_S
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=15V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
SWITCHING PARAMETERS
Q_g(10V)
Q_g(4.5V)
Q_gs
Q_gd
t_D(on)
t_r
t_D(off)
t_f
t_rr
Q_rr
Total Gate Charge
Total Gate Charge
Gate Source Charge
V_GS=10V, V_DS=15V, I_D=6.9A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V_GS=10V, V_DS=15V, R_L=2.2Ω,
R_GEN=3Ω
Body Diode Reverse Recovery Time ^IF^{=6.9A, dI/dt=100A/µs}
Body Diode Reverse Recovery Charge ^IF^{=6.9A, dI/dt=100A/µs}
Typ
1.9
22.5
31.3
34.5
15.4
0.76
680
102
77
3
13.84
6.74
1.82
3.2
4.6
4.1
20.6
5.2
16.5
7.8
Max
1
5
100
3
28
38
42
1
3
Units
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R_θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R _θJA is the sum of the thermal impedence from junction to lead R_θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in² FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The SOA
curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.