AO4606 Datasheet, PDF (1/9 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

Feb 2003
AO4606
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4606 uses advanced trench
technology MOSFETs to provide excellent
R_DS(ON) and low gate charge. The
complementary MOSFETs may be used
to form a level shifted high side switch,
and for a host of other applications.
Features
n-channel
V_DS (V) = 30V
I_D = 6.9A
R_DS(ON)
< 28mΩ (V_GS=10V)
< 42mΩ (V_GS=4.5V)
p-channel
-30V
-6A
R_DS(ON)
< 35mΩ (V_GS = 10V)
< 58mΩ (V_GS = 4.5V)
S2 1 8 D2
G2 2 7 D2
S1 ^{3 6} D1
G1 ^{4 5} D1
SOIC-8
D2
D1
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain
T_A=25°C
6.9
Current ^A
T_A=70°C
I_D
5.8
Pulsed Drain Current ^B
I_DM
30
Power Dissipation
T_A=25°C
T_A=70°C
P_D
2
1.44
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Max p-channel
-30
±20
-6
-5
-30
2
1.44
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Symbol
R_θJA
R_θJL
R_θJA
R_θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ Max Units
48
62.5 °C/W
74
110 °C/W
35
60 °C/W
48
62.5 °C/W
74
110 °C/W
35
40 °C/W
Alpha & Omega Semiconductor, Ltd.