AO3162 Datasheet, PDF (2/5 Pages) Alpha & Omega Semiconductors – 600V,0.034A N-Channel MOSFET

AO3162
Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BV_DSS Drain-Source Breakdown Voltage
I_D=250µA, V_GS=0V, T_J=25°C
I_D=250µA, V_GS=0V, T_J=150°C
BV_DSS
/∆TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
I_DSS
Zero Gate Voltage Drain Current
V_DS=600V, V_GS=0V
V_DS=480V, T_J=125°C
I_GSS
Gate-Body leakage current
V_DS=0V, V_GS=±30V
V_GS(th) Gate Threshold Voltage
V_DS=5V, I_D=8µA
R_DS(ON) Static Drain-Source On-Resistance
V_GS=10V, I_D=0.016A
g_FS
Forward Transconductance
V_DS=40V, I_D=0.016A
V_SD
Diode Forward Voltage
I_S=0.016A,V_GS=0V
I_S
Maximum Body-Diode Continuous Current
I_SM
Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=25V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
SWITCHING PARAMETERS
Q_g
Q_gs
Q_gd
t_D(on)
t_r
t_D(off)
t_f
t_rr
Q_rr
Total Gate Charge
Gate Source Charge
V_GS=10V, V_DS=400V, I_D=0.01A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
V_GS=10V, V_DS=300V, I_D=0.01A,
R_G=6Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time ^IF^{=0.016A,dI/dt=100A/µs,V}DS^=300V
Body Diode Reverse Recovery Charge ^IF^{=0.016A,dI/dt=100A/µs,V}DS^=300V
Min Typ Max Units
600
-
-
-
700
-
V
-
0.69
- V/ ^oC
-
-
1
µA
-
-
10
-
- ±100 nΑ
2.8 3.2 4.1
V
-
154 500 Ω
- 0.045 -
S
- 0.74 1
V
-
- 0.034 A
-
- 0.16 A
-
4.2
6
pF
- 0.45 0.6 pF
- 0.05 0.07 pF
14
28
42
Ω
-
0.1 0.15 nC
- 0.03 0.05 nC
- 0.05 0.08 nC
-
13.8 20
ns
-
10
15
ns
-
39.2 57
ns
-
13
19
ns
-
105 160 ns
-
9.5 14.3 ^nC
A: The value of R _θJA is measured with the device mounted on 1in ² FR-4 board with 2oz. Copper, in a still air environment with T _A =25°C. The value in
any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R _θJA is the sum of the thermal impedence from junction to lead R _θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in ² FR-4 board with 2oz. Copper, in a still air environment with T _A=25°C. The SOA curve
provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: May 2012
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