AO3162 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 600V,0.034A N-Channel MOSFET

AO3162
600V,0.034A N-Channel MOSFET
General Description
Product Summary
The AO3162 is fabricated using an advanced high voltage
MOSFET process that is designed to deliver high levels
of performance and robustness in popular AC-DC
applications.
By providing low R_DS(on), C_iss and C_rss along with
guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
700V@150℃
0.034A
< 500Ω
SOT23A
Top View
Bottom View
D
D
S
G
G
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current^A,F
T_A=70°C
Pulsed Drain Current ^B
Peak diode recovery dv/dt
I_D
I_DM
dv/dt
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
600
±30
0.034
0.028
0.16
5
1.39
0.89
-50 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
70
100
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
63
Max
90
125
80
D
S
Units
V
V
A
V/ns
W
°C
Units
°C/W
°C/W
°C/W
Rev0: May 2012
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