AO4606_12 Datasheet, PDF (1/9 Pages) Alpha & Omega Semiconductors – 30V Complementary MOSFET

AO4606
30V Complementary MOSFET
General Description
The AO4606 uses advanced trench technology
MOSFETs to provide excellent R_DS(ON) and low gate
charge. The complementary MOSFETs may be used to
form a level shifted high side switch, and for a host of
other applications.
Product Summary
N-Channel
V_DS= 30V
I_D= 6A (V_GS=10V)
R_DS(ON)
< 30mΩ (V_GS=10V)
< 42mΩ (V_GS=4.5V)
100% UIS Tested
100% R_g Tested
P-Channel
-30V
-6.5A (V_GS=-10V)
R_DS(ON)
< 28mΩ (VGS=-10V)
< 44mΩ (VGS=-4.5V)
100% UIS Tested
100% R_g Tested
Top View
SOIC-8
Bottom View
Top View
D2
D1
S2 1
8 D2
G2 2
7
D2
S1 3
6 D1
G1 4
5
D1
G2
G1
S2
S1
Pin1
n-channel
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol Max n-channel Max p-channel
Drain-Source Voltage
V_DS
30
-30
Gate-Source Voltage
V_GS
±20
±20
Continuous Drain
T_A=25°C
Current
T_A=70°C
Pulsed Drain Current ^C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
6
-6.5
I_D
5
-5.3
I_DM
30
-30
I_AS, I_AR
10
23
E_AS, E_AR
5
26
T_A=25°C
Power Dissipation ^B T_A=70°C
2
2
P_D
1.3
1.3
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Units
V
V
A
A
mJ
W
°C
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
48
74
Maximum Junction-to-Lead
Steady-State
R_θJL
32
Max
Units
62.5
°C/W
90
°C/W
40
°C/W
Rev 10: April 2012
www.aosmd.com
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