AO3702 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO3702
N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO3702/L uses advanced trench technology to provide
excellent R_DS(ON), low gate charge.
A Schottky diode is provided to facilitate the implementation of
a bidirectional blocking switch, or for DC-DC conversion
applications. AO3702 and AO3702L are electrically identical.
-RoHs Complaint
-AO3702L is Halogen Free
Features
V_DS (V) = 20V
I_D = 3.5A (V_GS = 4.5V)
R_DS(ON) < 62mΩ (V_GS = 4.5V)
R_DS(ON) < 70mΩ (V_GS = 2.5V)
R_DS(ON) < 85mΩ (V_GS = 1.8V)
SCHOTTKY
V_DS (V) = 20V, I_F = 1A, V_F<0.5V@0.5A
SOT-23-5
Top View
G 15 D
S2
A 34 K
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current ^A
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Schottky reverse voltage
V_KA
Continuous Forward Current ^A
T_A=25°C
T_A=70°C
I_F
Pulsed Forward Current ^B
I_FM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Symbol
R_θJA
R_θJL
R_θJA
R_θJL
D
K
S
A
MOSFET
20
±8
3.5
2.7
25
1.15
0.7
-55 to 150
Typ
80.3
117
43
153
173
103
Schottky
20
1
0.5
10
0.66
0.42
-55 to 150
Max
110
150
80
190
220
140
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com