AO3413_10 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 20V P-Channel MOSFET

AO3413
20V P-Channel MOSFET
General Description
The AO3413 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
Features
V_DS = -20V
I_D = -3A
R_DS(ON) < 80mΩ
R_DS(ON) < 100mΩ
R_DS(ON) < 130mΩ
(V_GS = -4.5V)
(V_GS =- 4.5V)-15
(V_GS = -2.5V)
(V_GS = -1.8V)
SOT23
Top View
Bottom View
D
D
D
S
G
G
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^A
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-20
±8
-3
-2.4
-15
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^A Steady-State
R_θJA
70
100
Maximum Junction-to-Lead ^C Steady-State
R_θJL
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 9: July 2010
www.aosmd.com
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