APM3011N Datasheet, PDF (4/11 Pages) Anpec Electronics Coropration – N-Channel Enhancement Mode MOSFET

APM3011N
Typical Characteristics Cont.
On-Resistance vs. Gate-to-Source Voltage
0.035
0.030
I_DS=30A
0.025
0.020
0.015
0.010
0.005
0.000
3
4
5
6
7
8
9
10
Gate Voltage (V)
On-Resistaence vs. Junction Temperature
1.6
VI_DGSS==3100AV
1.4
1.2
1.0
0.8
0.6
-50 -25 0
25 50 75 100 125 150
T_j-Junction Temperature (°C)
10
VI_DDSS==2105AV
8
Gate Charge
6
4
2
0
0
10
20
30
40
50
Q_G-Total-Gate Charge (nC)
Capacitance Characteristics
3000
2000
Ciss
1000
500
Coss
Crss
Frequency=1MHz
100
0.1
1
10
30
V_DS-Drain-to-Source Voltage (V)
Copyright  ANPEC Electronics Corp.
4
Rev. A.3 - Mar., 2002
www.anpec.com.tw