APM2306 Datasheet, PDF (4/9 Pages) Anpec Electronics Coropration – N-Channel Enhancement Mode MOSFET

APM2306
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
120
100
80
ID=3.5A
60
40
20
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
70
VGS=10V
ID=3.5A
60
50
40
30
20
10
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
10
VD=15V
ID=3.5A
8
Gate Charge
6
4
2
0
0 2 4 6 8 10 12 14
QG - Gate Charge (nC)
Capacitance
750
625
500
Ciss
375
250
125
0
0
Coss
Crss
5
10 15 20 25 30
VDS - Drain-to-Source Voltage (V)
Copyright  ANPEC Electronics Corp.
4
Rev. A.2 - Aug., 2002
www.anpec.com.tw