APM2306 Datasheet, PDF (1/9 Pages) Anpec Electronics Coropration – N-Channel Enhancement Mode MOSFET

APM2306
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
30V/3.5A,
R_DS(ON)=70mΩ(typ.)
@
V =5V
GS
R_DS(ON)=42mΩ(typ.) @ V_GS=10V
• Super High Dense Cell Design
• High Power and Current Handling Capability
• SOT-23 Package
Applications
• Switching Regulators
• Switching Converters
D
3
1
2
G
S
Top View of SOT-23
Ordering and Marking Information
APM2306
H andling C ode
Temp. Range
Package Code
Package Code
A : SOT-23
O perating Junction Tem p. R ange
C : -55 to 1 50^°C
H andling C ode
TR : Tape & Reel
APM2306 A :
M06X
X - Date Code
Absolute Maximum Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Rating
Unit
V_DSS
V_GSS
Drain-Source Voltage
Gate-Source Voltage
30
V
±20
I_D
Maximum Pulsed Drain Current ( pulse width ≤ 300µs)
3.5
A
I_DM
Maximum Drain Current – Pulsed
16
P_D
Maximum Power Dissipation
T_A=25°C
T_A=100°C
1.25
W
0.5
W
T_J
Maximum Junction Temperature
150
°C
T_STG Storage Temperature Range
-55 to 150
°C
Ac_{uNsPtEoCmererssetroveosbttahien}
right to make changes to improve reliability
the latest version of relevant information to
or manufacturability
verify before placing
without
orders.
notice,
and
advise
Copyright  ANPEC Electronics Corp.
1
Rev. A.2 - Aug., 2002
www.anpec.com.tw